WNM2021 WNM2021 n-channel, 20v, 0.89a, small signal mosfet descriptions the WNM2021 is n-channel enhancement mos field effect transistor. uses advanced trench technology and design to provide excellent r ds (on) with low gate charge. this device is suitable for use in dc-dc conversion, load sw itch and level shift. standard product WNM2021 is pb-free. features z trench technology z supper high density cell design z excellent on resistance z extremely low threshold voltage z small package sot-323 applications z dc-dc converter circuit z small signal switch z load switch z level shift z http//:www.willsemi.com sot-323 pin configuration (top view) 21* 21 = device code * = month (a~z) marking order information device package shipping WNM2021-3/tr sot-323 3000/reel&tape v ds (v) rds(on) ( ? ) i d (a) 0.220@ v gs =4.5v 0.55 0.260@ v gs =2.5v 0.45 20 0.320@ v gs =1.8v 0.35 s d 3 g 1 2 3 1 2 will semiconductor ltd. 1 dec, 2010 - rev.1.0
WNM2021 absolute maximum ratings parameter symbol 10 s steady state unit drain-source voltage v ds 20 gate-source voltage v gs 6 v t a =25c 0.89 0.82 continuous drain current a t a =70c i d 0.71 0.65 a t a =25c 0.37 0.31 maximum power dissipation a t a =70c p d 0.23 0.20 w t a =25c 0.78 0.70 continuous drain current b t a =70c i d 0.62 0.56 a t a =25c 0.29 0.23 maximum power dissipation b t a =70c p d 0.18 0.14 w pulsed drain current c i dm 1.4 a operating junction temperature t j 150 c lead temperature t l 260 c storage temperature range t stg -55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t 10 s 275 335 junction-to-ambient thermal resistance a steady state r ja 325 395 t 10 s 375 430 junction-to-ambient thermal resistance b steady state r ja 445 535 junction-to-case thermal resistance steady state r jc 260 300 c/w a surface mounted on fr4 board using 1 square inch pad size, 1oz copper b surface mounted on fr4 board using minimum pad size, 1oz copper c repetitive rating, pulse width limited by junction temperature, t p =10s, duty cycle=1% d repetitive rating, pulse width limited by junction temperature t j =150c. will semiconductor ltd. 2 dec, 2010 - rev.1.0
WNM2021 electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-to-source breakdown voltage bv dss v gs = 0 v, i d = 250ua 20 v zero gate voltage drain current i dss v ds =16 v, v gs = 0v 100 na gate-to-source leakage current i gss v ds = 0 v, v gs =5v 5 ua on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = 250ua 0.45 0.58 0.85 v vgs = 4.5v, id = 0.55a 220 260 vgs = 2.5v, id = 0.45a 260 310 drain-to-source on-resistance r ds(on) vgs = 1.8v, id = 0.35a 320 380 m? forward transconductance g fs vds = 5 v, id = 0.55a 2.0 s charges, capacitances and gate resistance input capacitance c iss 50 output capacitance c oss 13 reverse transfer capacitance c rss v gs = 0 v, f = 1.0 mhz, v ds = 10 v 8 pf total gate charge q g(tot) 1.15 threshold gate charge q g(th) 0.06 gate-to-source charge q gs 0.15 gate-to-drain charge q gd v gs = 4.5 v, v ds = 10 v, i d = 0.55a 0.23 nc switching characteristics turn-on delay time td(on) 22 rise time tr 80 turn-off delay time td(off) 700 fall time tf v gs = 4.5 v, v ds = 10v, r l =3 ? , r g =6 ? 380 ns body diode characteristics forward voltage v sd v gs = 0 v, i s = 0.35a 0.5 0.7 1.1 v will semiconductor ltd. 3 dec, 2010 - rev.1.0
WNM2021 typical characteristics (ta=25 o c, unless otherwise noted) o output characteristics output characteristics on-resistance vs. drain current on-resistance vs. drain current on-resistance vs. junction temperature on-resistance vs. junction temperature transfer characteristics transfer characteristics on-resistance vs. gate-to-source voltage on-resistance vs. gate-to-source voltage threshold voltage vs. temperature threshold voltage vs. temperature c, unless otherwise noted) 0.0 0.4 0.8 1.2 1.6 2.0 0 1 2 3 4 v gs = 2.5v ~5.0v 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.4 0.8 1.2 1.6 2.0 t=-50 o c v gs =2.0v v gs =1.5v i ds -drain-to-source current (a) v ds -drain-to-source voltage(v) t=25 o c t=125 o c i ds -drain to source current(a) v gs -gate-to-source voltage(v) v ds =5v 0.4 0.8 1.2 1.6 2.0 100 150 200 250 300 350 400 v gs =4.5v v gs =1.8v v gs =2.5v r ds(on) - on-resistance(m ) i ds -drain-to-source current(a) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 400 800 1200 1600 r ds(on) - on-resistance (m ) v gs -gate-to-source voltage(v) -50 -25 0 25 50 75 100 125 150 120 160 200 240 280 320 vgs=4.5v, id=0.55a -50 -25 0 25 50 75 100 125 150 0.2 0.3 0.4 0.5 0.6 0.7 0.8 i d =250ua v gs(th) gate threshold voltage (v) temperature ( o c) r ds(on) - on-resistance (m ) temperature( o c) will semiconductor ltd. 4 dec, 2010 - rev.1.0
WNM2021 capacitance 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.2 0.4 0.6 0.8 t=25 o c body diode forward voltage safe operating power transient thermal response (junction-to-ambient) t=150 o c v sd -source-to-drain voltage(v) i sd -source to drain current(a) 0246810 0 10 20 30 40 50 60 v gs =0v f=1mhz ciss coss crss c - capacitance(pf) v ds drain-to-source voltage (v) will semiconductor ltd. 5 dec, 2010 - rev.1.0 v ds - drain-to-so u rce v oltage ( v ) 10 0.1 0.1 1 10 100 0.001 1 - drain c u rrent (a) i d 0.01 t a = 25 c single p u lse 10 ms 100 ms dc 1 s 10 s limited b y r ds(on) 10 -3 10 -2 0 0 6 0 1 1 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) n ormalized ef fecti v e t ransient thermal impedance 1. d u ty cycle, d = 2. per unit base = r th j a = 325 c/ w 3. t jm - t a = p dm z th j a (t ) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm
WNM2021 package outline dimensions sot-323 dimensions in millimeter symbol min. typ. max. a 0.900 1.000 1.100 a1 0.000 0.050 0.100 a2 0.900 0.950 1.000 b 0.200 0.300 0.400 c 0.080 0.115 0.150 d 2.000 2.100 2.200 e 1.150 1.250 1.350 e1 2.150 2.300 2.450 e 0.650typ e1 1.200 1.300 1.400 l 0.525ref l1 0.260 0.460 0 8 will semiconductor ltd. 6 dec, 2010 - rev.1.0
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